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multi-quantum-well ultraviolet photosensors by capping an unactivated Mg-doped GaN layer
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10.1063/1.2793504
/content/aip/journal/apl/91/14/10.1063/1.2793504
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/14/10.1063/1.2793504
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Typical room temperature photoluminescence spectra of sensors A and B. The inset shows SIMS profiles of sensors A and B.

Image of FIG. 2.
FIG. 2.

The AFM photographs of (a) sensor A and (b) sensor B.

Image of FIG. 3.
FIG. 3.

The SEM images of (a) sensor A and (b) sensor B.

Image of FIG. 4.
FIG. 4.

The current-voltage characteristics of sensors A and B under dark condition.

Image of FIG. 5.
FIG. 5.

Measured spectral responses of sensors A and B measured at bias. The inset shows measured responsivity at as a function of applied bias for sensors A and B.

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/content/aip/journal/apl/91/14/10.1063/1.2793504
2007-10-03
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: InGaN∕GaN multi-quantum-well ultraviolet photosensors by capping an unactivated Mg-doped GaN layer
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/14/10.1063/1.2793504
10.1063/1.2793504
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