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SIMS profile (solid line) and associated simulated potential (dashed line) showing the 30- and -spaced highly doped layers.
(a) Reconstructed phase images for each hologram acquired. (b) Profiles extracted from the phase images acquired using a biprism voltage of and averaged over . The profiles correspond to 128, 64, 16, and acquisitions from top to bottom. (c) Same (b), except using a biprism voltage of . (d) Magnified profile of the -spaced layers associated with the acquisition from (c).
Hologram contrast, counts per CCD pixel, theoretical phase resolution, and random noise determined from the scatter on a single, nonaveraged profile extracted from a reconstructed hologram containing only vacuum.
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