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Donor binding energy and thermally activated persistent photoconductivity in high mobility (001) AlAs quantum wells
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) Energy band diagram of the AlAs QW. The axis denotes the growth direction in nm and the vertical axis shows the energy scale in eV. The + denotes the Si delta doping layers in the AlGaAs layers. The solid line shows the -point band and the dashed line shows the -point band. (b) Inset depicts the QW in detail with electric field across the spacer , donor binding energy , conduction band offset , confinement energy , and Fermi energy relative to the well minimum.

Image of FIG. 2.
FIG. 2.

and measurements at dark (dashed) and postillumination (solid) for (001) sample C. Due to the high transport mass of AlAs, the quantum Hall features are seen only below . In the dark, and and postillumination, and . Inset shows the two occupied valleys.

Image of FIG. 3.
FIG. 3.

(a) Illustration of PIA for sample C. Postillumination when the sample is returned to dark at low , density remains the same as (∎). When is increased up to , the saturation density is obtained (▵). The arrow shows the time progression. (b) The density of two dimensional electron system in an (001) oriented AlAs quantum well as a function of the Si delta doping . The top axis defines the time of Si doping corresponding to the doping densities. The vertical dashed line shows the saturation threshold for both the dark and the postillumination [red LED (▿) and IR LED (▵)] conditions at . The solid lines are plotted as an aid to locating the saturation threshold.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Donor binding energy and thermally activated persistent photoconductivity in high mobility (001) AlAs quantum wells