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Intersubband absorption in coupled quantum wells
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10.1063/1.2794013
/content/aip/journal/apl/91/14/10.1063/1.2794013
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/14/10.1063/1.2794013

Figures

Image of FIG. 1.
FIG. 1.

Calculated conduction-band lineup and envelope functions of the three lowest bound states (referenced to their respective energy levels) of an CQW structure, corresponding to sample A of Table I.

Image of FIG. 2.
FIG. 2.

On-axis x-ray diffraction scan of sample C.

Image of FIG. 3.
FIG. 3.

Cross-section electron micrograph of sample C. The darker and lighter areas correspond to GaN and AlN, respectively. The AlGaN barriers appear as gray regions between the coupled GaN wells.

Image of FIG. 4.
FIG. 4.

Measured ISB absorbance spectra of samples A, B, and C.

Tables

Generic image for table
Table I.

Estimated layer thicknesses (starting from the AlN outer barrier) and coupling-barrier Al content of the three samples studied in this work, and corresponding experimental and theoretical energies of the ∣1⟩–∣2⟩ and ∣1⟩–∣3⟩ ISB transitions.

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/content/aip/journal/apl/91/14/10.1063/1.2794013
2007-10-01
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Intersubband absorption in AlN∕GaN∕AlGaN coupled quantum wells
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/14/10.1063/1.2794013
10.1063/1.2794013
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