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Calculated conduction-band lineup and envelope functions of the three lowest bound states (referenced to their respective energy levels) of an CQW structure, corresponding to sample A of Table I.
On-axis x-ray diffraction scan of sample C.
Cross-section electron micrograph of sample C. The darker and lighter areas correspond to GaN and AlN, respectively. The AlGaN barriers appear as gray regions between the coupled GaN wells.
Measured ISB absorbance spectra of samples A, B, and C.
Estimated layer thicknesses (starting from the AlN outer barrier) and coupling-barrier Al content of the three samples studied in this work, and corresponding experimental and theoretical energies of the ∣1⟩–∣2⟩ and ∣1⟩–∣3⟩ ISB transitions.
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