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The characteristic of strain relaxation on SiGe virtual substrate with thermal annealing
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View: Figures


Image of FIG. 1.
FIG. 1.

(Color online) The surface morphology of the as-grown sample. Crosshatch undulations with average depth of about are aligned along the two ⟨110⟩ directions.

Image of FIG. 2.
FIG. 2.

The rms roughness of surface crosshatch undulations characterized by AFM vs thermal annealing temperature.

Image of FIG. 3.
FIG. 3.

(Color online) (a) A typical UV-Raman spectrum from SiGe layer of Fig. 1. The plasma line at is used as a reference and the Si–Si phonon mode at is originated from SiGe layer. (b) The spatial Raman image of Si–Si phonon mode for as-grown sample obtained by scanning an area of with a step interval of . (c) The Raman shift of the local structure vs annealing temperature, showing a different relaxation rate for normal and crosshatch regions.

Image of FIG. 4.
FIG. 4.

The cross-sectional TEM image of (a) the as-grown sample and (b) the sample annealed at . The misfit dislocations at interface were marked by dashed circles.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: The characteristic of strain relaxation on SiGe virtual substrate with thermal annealing