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Characterization of metal-ferroelectric -insulator -silicon capacitors for nonvolatile memory applications
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10.1063/1.2794335
/content/aip/journal/apl/91/14/10.1063/1.2794335
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/14/10.1063/1.2794335
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

properties under of the structures with annealed . The inset shows the curves of the Pt/BFO/Pt structure with BFO annealed at for .

Image of FIG. 2.
FIG. 2.

properties under of the MFIS structures with (a)postannealed and (b) unannealed (sample U).

Image of FIG. 3.
FIG. 3.

Memory windows of the MFIS structures with postannealed and unannealed (sample U).

Image of FIG. 4.
FIG. 4.

properties under varying frequencies at of the MFIS structures with (a)postannealed and (b) unannealed (sample U).

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/content/aip/journal/apl/91/14/10.1063/1.2794335
2007-10-01
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Characterization of metal-ferroelectric (BiFeO3)-insulator (ZrO2)-silicon capacitors for nonvolatile memory applications
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/14/10.1063/1.2794335
10.1063/1.2794335
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