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Barrier performance of ultrathin Ni–Ti film for integrating ferroelectric capacitors on Si
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10.1063/1.2794734
/content/aip/journal/apl/91/14/10.1063/1.2794734
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/14/10.1063/1.2794734
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Ni and Ni spectra of the as-grown and (b) the one annealed in oxygen.

Image of FIG. 2.
FIG. 2.

Current-voltage characteristic of heterostructure characterized vertically.

Image of FIG. 3.
FIG. 3.

XRD spectrum of the heterostructure.

Image of FIG. 4.
FIG. 4.

TEM image of the cross-sectional heterostructure. The inset presents the interfaces between Ni–Ti layer and its adjacent layers (i.e., LSCO and Si).

Image of FIG. 5.
FIG. 5.

(a) A typical hysteresis loop of the LSCO/PZT/LSCO capacitors integrated on . The inset shows the switchable polarization as a function of applied voltage. (b) Fatigue characteristic of the LSCO/PZT/LSCO capacitor as a function of switching cycles.

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/content/aip/journal/apl/91/14/10.1063/1.2794734
2007-10-04
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Barrier performance of ultrathin Ni–Ti film for integrating ferroelectric capacitors on Si
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/14/10.1063/1.2794734
10.1063/1.2794734
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