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Schematic of H-PDLC photomask device in the lithography process. Broadband UV exposure is filtered by FWHM spectral filter. H-PDLC reflects filtered exposure except region with voltage applied.
Line shape of microstructure formed using H-PDLC photomask superimposed with the same feature fabricated using a static mask.
Contour maps of developed surfaces formed with a H-PDLC mask and its static mask counterpart. (a) Developed resist surface fabricated with a H-PDLC mask in its reflective state. (b) Developed resist under static mask. (c) Developed glass substrate formed with the H-PDLC mask in its transparent state. (d) Developed glass substrate formed under a light field static mask showing a small amount of resist residue after development.
An example of a structure fabricated with the H-PDLC mask. (a) The resist cured with the H-PDLC in its reflecting state; therefore no features were formed. (b) Upon application of bias to the conducting areas of the film, transparent regions form, and that structure is fabricated.
Characterization data of microstructure samples.
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