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Beryllium compensation doping of infrared superlattice photodiodes
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10.1063/1.2795086
/content/aip/journal/apl/91/14/10.1063/1.2795086
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/14/10.1063/1.2795086

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Quantum efficiency vs doped samples measured at for top-sided illuminated measurements. The increase in QE is due to the background concentration going from type to type. The inset shows the specific detectivity.

Image of FIG. 2.
FIG. 2.

(Color online) Modeled current density of the reference sample and beryllium doped samples taking into account the diffusion, generation recombination, trap-assisted tunneling, and band-to-band tunneling. The reference sample is modeled as and the doped samples are treated as .

Image of FIG. 3.
FIG. 3.

(Color online) Experimentally determined dynamical impedance at zero bias voltage at . The dashed lines represent the diffusion, , and band-to-band tunneling components. The solid line is the cumulative theoretical value of the product.

Tables

Generic image for table
Table I.

Summary of measurements at .

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/content/aip/journal/apl/91/14/10.1063/1.2795086
2007-10-02
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Beryllium compensation doping of InAs∕GaSb infrared superlattice photodiodes
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/14/10.1063/1.2795086
10.1063/1.2795086
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