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Representative fringe image on the linear photodiode array. The inset is a schematic diagram of the dual slab layer system corresponding to the properties shown in Table I.
Transverse optical field amplitude distribution and refractive index profile for the structure whose properties are listed in Table I.
Device layer structure with alternative layer 6 for the (a) and (b) designs. The measured photoluminescence wavelengths of the ternary and quaternary materials are given in parentheses.
Calculated rate of change of effective mode index with layer index for [structure (a)] and [structure (b)] devices.
Thermo-optic coefficients of and alloys determined at TE and TM excitations at a wavelength of and at a center temperature of .
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