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The effects of nickel germanosilicide contacts on the biaxial compressive stress in thin epitaxial silicon-germanium alloys on silicon
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10.1063/1.2795346
/content/aip/journal/apl/91/14/10.1063/1.2795346
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/14/10.1063/1.2795346
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Raman spectra obtained after forming on thick using three different Ni thicknesses.

Image of FIG. 2.
FIG. 2.

(Color online) In-plane strain in alloys with two different Ge concentrations plotted as a function of the Ni thickness used to form the layers. The layers were strained prior to formation. Negative values indicate compression.

Image of FIG. 3.
FIG. 3.

(Color online) In-plane strain in alloys with two different Ge concentrations plotted as a function of the Ni thickness used to form the layers. The layers were fully or mostly relaxed prior to formation.

Image of FIG. 4.
FIG. 4.

(Color online) In-plane strain in alloys with three different boron concentrations plotted as a function of the Ni thickness used to form the germanosilicide layers.

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/content/aip/journal/apl/91/14/10.1063/1.2795346
2007-10-04
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: The effects of nickel germanosilicide contacts on the biaxial compressive stress in thin epitaxial silicon-germanium alloys on silicon
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/14/10.1063/1.2795346
10.1063/1.2795346
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