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Analysis of a wafer bonded heterojunction by transmission electron microscopy
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10.1063/1.2795797
/content/aip/journal/apl/91/14/10.1063/1.2795797
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/14/10.1063/1.2795797
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Photocurrents of three different photodiodes as a function of reverse bias voltage at . For comparison, the photocurrent of a commercially available avalanche photodiode is shown.

Image of FIG. 2.
FIG. 2.

A bright field TEM photograph of a heterojunction and selected-area diffraction patterns from different positions indicated by circles.

Image of FIG. 3.
FIG. 3.

High-resolution TEM photographs for a heterojunction.

Image of FIG. 4.
FIG. 4.

Ge, Si, and O atom distributions in the lines shown by A-B (b) and C-D (c) shown in the TEM photograph (a).

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/content/aip/journal/apl/91/14/10.1063/1.2795797
2007-10-04
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Analysis of a wafer bonded Ge∕Si heterojunction by transmission electron microscopy
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/14/10.1063/1.2795797
10.1063/1.2795797
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