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Interface studies of GaAs metal-oxide-semiconductor structures using atomic-layer-deposited nanolaminate gate dielectric
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10.1063/1.2798499
/content/aip/journal/apl/91/14/10.1063/1.2798499
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/14/10.1063/1.2798499
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Figures

Image of FIG. 1.
FIG. 1.

(a) Leakage current density vs gate bias (V) on nanolaminate, pure , and pure MOS capacitors after postdeposition annealing at . (b) characteristics of nanolaminate, pure , and pure MOS capacitors before and after PDA process.

Image of FIG. 2.
FIG. 2.

characteristics of nanolaminate MOS capacitors measured at different frequencies ranging from on (a) -type GaAs substrate and (b) -type GaAs substrate. The Ga (c) and As (d) core level peaks were obtained from -GaAs and -GaAs with native oxides. The contributions of Ga–O, , and were calculated after curve fitting assuming Gaussian-Lorentzian line shape.

Image of FIG. 3.
FIG. 3.

characteristics of nanolaminate MOS capacitors measured at different temperatures ranging from room temperature to on (a) -type GaAs substrate and (b) -type GaAs substrate.

Image of FIG. 4.
FIG. 4.

(a) bidirectional characteristics of nanolaminate MOS capacitors on both -GaAs and -GaAs with different starting layers. Curves with empty symbols are from -starting samples and filled symbols are from -starting laminate samples. No significant difference can be observed with different starting layers. -starting samples have a little bit larger as expected. High-resolution XPS analysis of Hf peak (b) binding energy and (c) intensity on with or different surface treatments and -starting layer or -starting layer.

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/content/aip/journal/apl/91/14/10.1063/1.2798499
2007-10-05
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Interface studies of GaAs metal-oxide-semiconductor structures using atomic-layer-deposited HfO2∕Al2O3 nanolaminate gate dielectric
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/14/10.1063/1.2798499
10.1063/1.2798499
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