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(a) Leakage current density vs gate bias (V) on nanolaminate, pure , and pure MOS capacitors after postdeposition annealing at . (b) characteristics of nanolaminate, pure , and pure MOS capacitors before and after PDA process.
characteristics of nanolaminate MOS capacitors measured at different frequencies ranging from on (a) -type GaAs substrate and (b) -type GaAs substrate. The Ga (c) and As (d) core level peaks were obtained from -GaAs and -GaAs with native oxides. The contributions of Ga–O, , and were calculated after curve fitting assuming Gaussian-Lorentzian line shape.
characteristics of nanolaminate MOS capacitors measured at different temperatures ranging from room temperature to on (a) -type GaAs substrate and (b) -type GaAs substrate.
(a) bidirectional characteristics of nanolaminate MOS capacitors on both -GaAs and -GaAs with different starting layers. Curves with empty symbols are from -starting samples and filled symbols are from -starting laminate samples. No significant difference can be observed with different starting layers. -starting samples have a little bit larger as expected. High-resolution XPS analysis of Hf peak (b) binding energy and (c) intensity on with or different surface treatments and -starting layer or -starting layer.
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