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Determination of InN–GaN heterostructure band offsets from internal photoemission measurements
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10.1063/1.2794788
/content/aip/journal/apl/91/15/10.1063/1.2794788
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/15/10.1063/1.2794788
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) Normalized photocurrent vs photon energy in the energy range of showing three regions—a linear region (I), a nonlinear region (II), and a peak in the energy range of GaN band gap (III). For obtaining the photocurrent spectrum in region III, the long pass filter was removed and spectral bandpass reduced to . (b) Linear fit to the photocurrent in region I. (c) Square root of the excess photocurrent above the linear response as a function of photon energy in the nonlinear region (II).

Image of FIG. 2.
FIG. 2.

(Color online) Schematic model for the band offsets at the InN–GaN heterointerface. Transitions indicated by and correspond to the two threshold energies seen in the photocurrent spectrum. Band bending at the interface has been omitted for simplicity.

Image of FIG. 3.
FIG. 3.

(Color online) (a) Absorption (plotted as ) and (b) photoluminescence spectra measured at room temperature on the same sample used for the internal photoemission study.

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/content/aip/journal/apl/91/15/10.1063/1.2794788
2007-10-11
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Determination of InN–GaN heterostructure band offsets from internal photoemission measurements
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/15/10.1063/1.2794788
10.1063/1.2794788
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