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Chemical composition changes across the interface of amorphous on Si (001)
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10.1063/1.2798246
/content/aip/journal/apl/91/15/10.1063/1.2798246
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/15/10.1063/1.2798246
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

-contrast image of the as-deposited sample. The image-intensity profile across the interface is shown on the top. The numbers 1–4 correspond to the four positions where EELS spectra were acquired, as shown in Fig. 3.

Image of FIG. 2.
FIG. 2.

-contrast images of the as-deposited sample. (a) The region damaged by the electron beam is close to the interface. (b) No dark area is visible at the interface for the TEM specimen prepared with the cleavage method (which was used to minimize artifacts introduced by specimen preparation).

Image of FIG. 3.
FIG. 3.

EELSs acquired from four different positions across the interface, as shown in Fig. 1: (a) Si and La edges, (b) Sc and O edges, and (c) edge. The insets correspond to the atomic ratios and oxidation states of Sc and La.

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/content/aip/journal/apl/91/15/10.1063/1.2798246
2007-10-08
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Chemical composition changes across the interface of amorphous LaScO3 on Si (001)
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/15/10.1063/1.2798246
10.1063/1.2798246
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