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Thermal annealing effect on the interface structure of high- on silicon
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10.1063/1.2799177
/content/aip/journal/apl/91/15/10.1063/1.2799177
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/15/10.1063/1.2799177
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Figures

Image of FIG. 1.
FIG. 1.

-contrast images and their corresponding image-intensity profiles across the interface. (a) As-deposited sample. (b) -annealed sample. (c) -annealed sample. The numbers 1–4 correspond to the four positions where EELS spectra were acquired, as shown in Fig. 2.

Image of FIG. 2.
FIG. 2.

EELSs acquired from four different positions across the interface for the -annealed sample, as shown in Fig. 1(c). (a) Si and La edges. (b) Sc and O edges. (c) edge. The insets correspond to the atomic ratios and oxidation states of Sc and La.

Image of FIG. 3.
FIG. 3.

(Color online) -annealed sample. (a) HRTEM image. (b) EELS raster scan across the interface. The TEM specimen was prepared by the cleavage method to minimize artifacts. Spectra 5–7 are shown in red for easy visualization. The inset (-contrast image) is the raster scan area and the blue arrow indicates the scanning direction.

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/content/aip/journal/apl/91/15/10.1063/1.2799177
2007-10-10
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Thermal annealing effect on the interface structure of high-κLaScO3 on silicon
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/15/10.1063/1.2799177
10.1063/1.2799177
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