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-thick TaSiC amorphous films stable up to as a diffusion barrier for copper metallization
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10.1063/1.2799245
/content/aip/journal/apl/91/15/10.1063/1.2799245
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/15/10.1063/1.2799245

Figures

Image of FIG. 1.
FIG. 1.

Room temperature sheet resistance of (2, 24, and C in the TaSiC layer) deposited at different power ratios (DPRs) between C and targets after annealing at various temperatures.

Image of FIG. 2.
FIG. 2.

X-ray diffraction patterns taken on films deposited at DPR 1 and those annealed at a temperature between 300 and under flowing (5%).

Image of FIG. 3.
FIG. 3.

Cross-sectional TEM images of (a) as-deposited sandwiched film, and after being annealed at (b) and (c) for , while (d) is the enlarged circled regime of (c).

Tables

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Table I.

Composition of TaSiC films obtained at different deposition power ratio (DPR) between C and targets, as analyzed by FE-EPMA.

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/content/aip/journal/apl/91/15/10.1063/1.2799245
2007-10-12
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: 5-nm-thick TaSiC amorphous films stable up to 750°C as a diffusion barrier for copper metallization
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/15/10.1063/1.2799245
10.1063/1.2799245
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