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-thick TaSiC amorphous films stable up to as a diffusion barrier for copper metallization
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10.1063/1.2799245
/content/aip/journal/apl/91/15/10.1063/1.2799245
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/15/10.1063/1.2799245
/content/aip/journal/apl/91/15/10.1063/1.2799245
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/content/aip/journal/apl/91/15/10.1063/1.2799245
2007-10-12
2014-07-31
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: 5-nm-thick TaSiC amorphous films stable up to 750°C as a diffusion barrier for copper metallization
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/15/10.1063/1.2799245
10.1063/1.2799245
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