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Room temperature sheet resistance of (2, 24, and C in the TaSiC layer) deposited at different power ratios (DPRs) between C and targets after annealing at various temperatures.
X-ray diffraction patterns taken on films deposited at DPR 1 and those annealed at a temperature between 300 and under flowing (5%).
Cross-sectional TEM images of (a) as-deposited sandwiched film, and after being annealed at (b) and (c) for , while (d) is the enlarged circled regime of (c).
Composition of TaSiC films obtained at different deposition power ratio (DPR) between C and targets, as analyzed by FE-EPMA.
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