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Reconfigurable magnetic logic for all basic logic functions produced by ion bombardment induced magnetic patterning
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Image of FIG. 1.
FIG. 1.

(Color online) Setup for a reconfigurable magnetic logic consisting of two elliptical MTJs with opposite direction of EB in the magnetic reference electrode (blue arrows indicate the direction of ). : currents producing the magnetic fields acting as logic input, : current producing the magnetic field responsible for selection of logic function.

Image of FIG. 2.
FIG. 2.

(Color online) (a) White part: asteroids indicating switching fields of the soft magnetic layer measured in minor loops (see schematic sketch in upper edges) for the two MTJs (blue arrows: ); solid vertical red lines: values of corresponding to logic input ; gray part: Resistance of single MTJs and total resistance for serial / parallel wiring of both MTJs in dependence of for corresponding to horizontal red line 1. The vertical green dashed (blue dotted) lines indicate switching fields for initial positive (negative) saturation. + (−) indicates a high (low) resistance. Logic function: XOR; (b) gray part: resistance of single MTJs with function select magnetic field indicated by horizontal red line 2. Gray dash-dotted (purple dash-dot-dotted) line: switching fields for initial positive (negative) saturation. Logic functions: AND (negative saturation) and NOR (positive saturation).

Image of FIG. 3.
FIG. 3.

(Color online) Proof of principle: (a) setup for serial wiring of MTJs: sample divided into two parts, one part rotated 90°, lower conduction lines connected; (b) minor loop of serial wired bombarded and not bombarded MTJs with and ; (c) switching field asteroids for bombarded (at negative , was not perfectly aligned parallel to the EB direction during this measurements resulting in a tilt of asteroid) and not bombarded (at positive ) deduced from double minor loops, as shown in part (b); (d) and applied during the resistance measurement of serial wiring shown in (e).


Generic image for table
Table I.

Left: Total resistance in dependence of (increasing positive to right) for varied (e.g., decreasing from top to bottom with hard-magnetic FM lines producing negative magnetic field) and accordingly shifted area of low . High (low) circles represent high (low) because of a different (two MTJs, low) resistance of the single MTJs. Vertical lines represent the states (0,0), , and (1,1). Right: Logic functions resulting from the shift of the low area for serial/parallel wiring and difference measurement. (Note the different widths of low area on the last line.)


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Scitation: Reconfigurable magnetic logic for all basic logic functions produced by ion bombardment induced magnetic patterning