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(a) ADF-STEM image of a superlattice grown on terminated viewed along a  zone axis. (b) Averaged ADF line profile across the and layers of (a). The three layers exhibit a growth asymmetry, with an atomically sharp upper and a more diffuse lower interface.
ADF-STEM images of a three-uc-thick layer grown on (a) - and (b) SrO-terminated . In (b) the termination layer was switched by adding a single layer of before the growth of the layer. (c) Averaged ADF line profiles across the layers of (a) and (b). In both cases, the lower interface is more diffuse than the upper interface suggesting that the interface polarity is not the driving force for the growth asymmetry.
(Color) Fraction of Ti, V, and La across the interfaces. (a) grown on -terminated , forming the interface. (b) The termination layer was switched by adding a single layer of before the growth of the film, resulting in the interface.
(Color) Illustration of the effect of Sr surface segregation on the heterostructure. [(a) and (b)] The ideal interface structures for grown on - and (b) SrO-terminated . If Sr surface segregation is included, a fraction of the La atoms in the first vanadate layer moves down by 1 uc, resulting in an onset of the La concentrations of (c) 1.5 uc and (d) 0.5 uc below that of V in the two respective cases. The arrows in (c) and (d) indicate the La (red) and V (blue) concentrations in each layer.
(Color) (a) ADF-STEM image of the first vanadate layer in the superlattice show in Fig. 1. The growth direction is from left to right. The dotted line in (a) represents the path of the probe for the concentration profiles in (b). (b) La and V concentrations across the vanadate layer normalized to the total concentration of the layer. (c) The V and the inverse Ti concentration profiles almost track each other, indicating that the observed growth asymmetry is dominated by -site cation intermixing.
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