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Asymmetric interface profiles in heterostructures grown by pulsed laser deposition
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10.1063/1.2798060
/content/aip/journal/apl/91/16/10.1063/1.2798060
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/16/10.1063/1.2798060
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) ADF-STEM image of a superlattice grown on terminated viewed along a [001] zone axis. (b) Averaged ADF line profile across the and layers of (a). The three layers exhibit a growth asymmetry, with an atomically sharp upper and a more diffuse lower interface.

Image of FIG. 2.
FIG. 2.

ADF-STEM images of a three-uc-thick layer grown on (a) - and (b) SrO-terminated . In (b) the termination layer was switched by adding a single layer of before the growth of the layer. (c) Averaged ADF line profiles across the layers of (a) and (b). In both cases, the lower interface is more diffuse than the upper interface suggesting that the interface polarity is not the driving force for the growth asymmetry.

Image of FIG. 3.
FIG. 3.

(Color) Fraction of Ti, V, and La across the interfaces. (a) grown on -terminated , forming the interface. (b) The termination layer was switched by adding a single layer of before the growth of the film, resulting in the interface.

Image of FIG. 4.
FIG. 4.

(Color) Illustration of the effect of Sr surface segregation on the heterostructure. [(a) and (b)] The ideal interface structures for grown on - and (b) SrO-terminated . If Sr surface segregation is included, a fraction of the La atoms in the first vanadate layer moves down by 1 uc, resulting in an onset of the La concentrations of (c) 1.5 uc and (d) 0.5 uc below that of V in the two respective cases. The arrows in (c) and (d) indicate the La (red) and V (blue) concentrations in each layer.

Image of FIG. 5.
FIG. 5.

(Color) (a) ADF-STEM image of the first vanadate layer in the superlattice show in Fig. 1. The growth direction is from left to right. The dotted line in (a) represents the path of the probe for the concentration profiles in (b). (b) La and V concentrations across the vanadate layer normalized to the total concentration of the layer. (c) The V and the inverse Ti concentration profiles almost track each other, indicating that the observed growth asymmetry is dominated by -site cation intermixing.

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/content/aip/journal/apl/91/16/10.1063/1.2798060
2007-10-15
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Asymmetric interface profiles in LaVO3∕SrTiO3 heterostructures grown by pulsed laser deposition
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/16/10.1063/1.2798060
10.1063/1.2798060
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