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(Color online) (a) Conduction band structure of one period of the active region calculated using a self-consistent Schrödinger-Poisson solver at an applied field of and assuming an interface broadening of . The layer thicknesses in Å, starting from the injection barrier are ,,,, where the underlined layers are doped so that the sheet carrier density per period is . The layers are reported in italic, the AlAs layers in italic and bold, and the InAs layers in bold. Composite barriers and wells are further emphasized by parentheses and brackets, respectively. The shaded area represents the lowest energy miniband. The wavefunction square modulus of the upper laser levels is reported in bold. (b) Voltage and emitted power as a function of current measured at different heat sink temperatures under device continuous wave operation. (c) Wall-plug efficiency plotted as a function of the total power in the device at the heat sink temperatures marked on the figure.
(a) PL spectra collected at . The heat sink temperature is . The high energy PL bands peaked at and are multiplied by factors of 10 and 50, respectively. (b) Representative PL spectra measured at different dissipated powers at . The dashed line indicates the redshift of the high energy PL bands with .
(a) Electronic and lattice temperatures increases with respect to plotted as a function of the electrical power in the active region of the device. The continuous line is a linear fit to the data. The slope of the dashed line corresponds to the thermal resistance of the device in the region . Inset: electronic temperature increase with respect to as a function of the current density measured at . is the constant temperature shift due to the laser heating. (b) Total wall-plug efficiency plotted as a function of . The dashed line is a guide for the eye. The shaded area marks the lasing region.
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