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Surface plasmon assisted photoluminescence in GaAs–AlGaAs quantum well microstructures
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10.1063/1.2798253
/content/aip/journal/apl/91/16/10.1063/1.2798253
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/16/10.1063/1.2798253

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Cross section of the investigated SPR device microstructure. The substrate has a photoluminescence emitting heterostructure with a single quantum well buried about below the GaAs surface. The introduction of a thin dielectric layer of allowed to increase significantly both the penetration depth and the propagation length of surface plasmons.

Image of FIG. 2.
FIG. 2.

Normalized QW PL intensity in the grating region of sample A as a function of the grating vector (angle of collected measurements) for a grating with ridge height .

Image of FIG. 3.
FIG. 3.

Normalized QW PL intensity in the grating region of sample B as a function of the grating vector (angle of collected measurements) for a grating with ridge height .

Tables

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Table I.

Calculated propagation length and penetration depth of surface plasmon wavevectors for Au films of different thicknesses deposited directly on GaAs or separated from GaAs by a film.

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/content/aip/journal/apl/91/16/10.1063/1.2798253
2007-10-16
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Surface plasmon assisted photoluminescence in GaAs–AlGaAs quantum well microstructures
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/16/10.1063/1.2798253
10.1063/1.2798253
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