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Formation and optical characterization of single InAs quantum dots grown on GaAs nanoholes
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View: Figures


Image of FIG. 1.
FIG. 1.

AFM micrographs obtained in different areas of the sample are shown in (a) , and [(b) and (c)] . At the right, together with the typical QD profiles, a gray line has been drawn corresponding to the average profile of the GaAs nanoholes before InAs deposition.

Image of FIG. 2.
FIG. 2.

The evolution with the excitation power of the ensemble PL spectrum reveals the existence of two different QD families and the emission from excited bands at the indicated energies. A Gaussian fit has been included for the spectrum obtained at .

Image of FIG. 3.
FIG. 3.

(Color online) (a) Microphotoluminescence spectra of a single type-B QD measured for increasing excitation intensities. The emission peaks corresponding to different excitonic species have been identified by their power and polarization behavior as discussed in the text ( and mean singlet and triplet, respectively). (b) Polarized spectra recorded for the same single QD along perpendicular crystal directions showed the splitting of the neutral states.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Formation and optical characterization of single InAs quantum dots grown on GaAs nanoholes