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White light-emitting diodes based on a single InGaN emission layer
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View: Figures


Image of FIG. 1.
FIG. 1.

Electroluminescence spectra of a LED at different dc injection currents: (a) , (b) , (c) , and (d) . Initially, only yellow light around is clearly observed in the spectrum at low injection current. With increasing dc injection current, a blue light around rapidly emerges, and a blueshift is observed for the yellow light. All spectra are normalized and shifted in the vertical direction for clarity. The inset shows the characteristics of the LED.

Image of FIG. 2.
FIG. 2.

(Color online) Photographs of the LED at different dc injection currents: (a) , (b) , (c) , and (d) .

Image of FIG. 3.
FIG. 3.

Cross-sectional TEM image of the InGaN layers of the LED. It clearly shows In-rich quantum dots in the InGaN well layers of the LED structure.

Image of FIG. 4.
FIG. 4.

X-ray reciprocal space mapping for the (105) reflection of the white LED. Two diffraction peaks correspond to the GaN and the InGaN underlying layer, respectively. It shows that the InGaN underlying layer has large degree strain relaxation.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: White light-emitting diodes based on a single InGaN emission layer