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Dark current suppression in type II superlattice long wavelength infrared photodiodes with M-structure barrier
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10.1063/1.2800808
/content/aip/journal/apl/91/16/10.1063/1.2800808
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/16/10.1063/1.2800808
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) Schematic diagram of a superlattice photodiode design. (b) The band alignments of M-superlattice structure; the dash line shows the letter M shape of the band alignment. (c) Band alignment of standard type II superlattice.

Image of FIG. 2.
FIG. 2.

(Color online) [(a) and (c)] Band line up and [(b) and (d)] built-in electric field distribution of a standard junction and a junction with M barrier.

Image of FIG. 3.
FIG. 3.

(Color online) Electrical characterizations of superlattices with M-structure barrier. (a) Current vs voltatge. (b) Differential resistance–area product vs voltage. A maximum of was achieved with thick M-structure barrier.

Image of FIG. 4.
FIG. 4.

(Color online) Optical characterization of superlattices with M-structure barrier.

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/content/aip/journal/apl/91/16/10.1063/1.2800808
2007-10-18
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Dark current suppression in type II InAs∕GaSb superlattice long wavelength infrared photodiodes with M-structure barrier
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/16/10.1063/1.2800808
10.1063/1.2800808
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