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XRD of dielectric films using three Ti film thicknesses and annealed at in ambient for .
XPS spectra of (a) Nd , (b) Ti , (c) O , and (d) Si in films with different Ti film thicknesses and annealed at in ambient for .
curves of gate dielectrics having three Ti film thicknesses. The inset shows the and hysteresis voltage as a function of Ti film thickness for gate dielectrics annealed at in ambient.
Gate current density as a function of gate voltage for gate dielectric using three Ti film thicknesses.
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