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Structural and electrical characteristics of a high- gate dielectric
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10.1063/1.2800307
/content/aip/journal/apl/91/17/10.1063/1.2800307
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/17/10.1063/1.2800307
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

XRD of dielectric films using three Ti film thicknesses and annealed at in ambient for .

Image of FIG. 2.
FIG. 2.

XPS spectra of (a) Nd , (b) Ti , (c) O , and (d) Si in films with different Ti film thicknesses and annealed at in ambient for .

Image of FIG. 3.
FIG. 3.

curves of gate dielectrics having three Ti film thicknesses. The inset shows the and hysteresis voltage as a function of Ti film thickness for gate dielectrics annealed at in ambient.

Image of FIG. 4.
FIG. 4.

Gate current density as a function of gate voltage for gate dielectric using three Ti film thicknesses.

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/content/aip/journal/apl/91/17/10.1063/1.2800307
2007-10-23
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Structural and electrical characteristics of a high-kNdTiO3 gate dielectric
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/17/10.1063/1.2800307
10.1063/1.2800307
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