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Measured photocurrent of photodiodes with (sample B) and without (sample A) LT-GaN interlayer under xenon light illumination. The inset shows the dark characteristics of both samples.
Reverse characteristics of sample B in the dark and light illumination. The right-hand axis indicates the photocurrent gain.
Ionization coefficient in sample B vs various reverse biases.
Spectral responsivities of samples A and B measured at different reverse biases.
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