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High responsivity of GaN photodiode by using low-temperature interlayer
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10.1063/1.2800813
/content/aip/journal/apl/91/17/10.1063/1.2800813
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/17/10.1063/1.2800813
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Measured photocurrent of photodiodes with (sample B) and without (sample A) LT-GaN interlayer under xenon light illumination. The inset shows the dark characteristics of both samples.

Image of FIG. 2.
FIG. 2.

Reverse characteristics of sample B in the dark and light illumination. The right-hand axis indicates the photocurrent gain.

Image of FIG. 3.
FIG. 3.

Ionization coefficient in sample B vs various reverse biases.

Image of FIG. 4.
FIG. 4.

Spectral responsivities of samples A and B measured at different reverse biases.

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/content/aip/journal/apl/91/17/10.1063/1.2800813
2007-10-22
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High responsivity of GaN p-i-n photodiode by using low-temperature interlayer
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/17/10.1063/1.2800813
10.1063/1.2800813
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