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Study of micropipe structure in SiC by x-ray phase contrast imaging
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10.1063/1.2801355
/content/aip/journal/apl/91/17/10.1063/1.2801355
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/17/10.1063/1.2801355
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Typical images of micropipes in SiC wafers cut perpendicular to the [0001] growth direction (a) and along the growth direction (b). The arrow in (b) indicates the fragment shown in (c)–(e) at various sample-to-detector distances: 10, 30, and , respectively. Halos in (a) correspond to etch pits on the wafer surface.

Image of FIG. 2.
FIG. 2.

Distance dependence of the pipe images. The distance values in cm are shown between the panels. The left-top panel shows fragments of the experimental images. The right-top panel shows the simulated images for the pipe of diameter. The bottom panels show simulated images for (left) and (right). The right scale shows the contrast value.

Image of FIG. 3.
FIG. 3.

Synchrotron radiation spectra estimated with and without the absorbers of thick Be and thick SiC.

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/content/aip/journal/apl/91/17/10.1063/1.2801355
2007-10-22
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Study of micropipe structure in SiC by x-ray phase contrast imaging
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/17/10.1063/1.2801355
10.1063/1.2801355
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