Erratum: “Control of silicidation in /Si(100) interfaces” [Appl. Phys. Lett.86, 041913 (2005)]
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Relation between HfSi formation and the weight change of silicon valence states. The reduction of , concentration (normalized with intensity) is intimately connected with the silicide concentration (normalized by the intensity of ). The dotted line is a guide for the eye.
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