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Erratum: “Control of silicidation in /Si(100) interfaces” [Appl. Phys. Lett.86, 041913 (2005)]
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FIG. 4.

Relation between HfSi formation and the weight change of silicon valence states. The reduction of , concentration (normalized with intensity) is intimately connected with the silicide concentration (normalized by the intensity of ). The dotted line is a guide for the eye.

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/content/aip/journal/apl/91/17/10.1063/1.2802071
2007-10-22
2014-04-19

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Scitation: Erratum: “Control of silicidation in HfO2/Si(100) interfaces” [Appl. Phys. Lett.86, 041913 (2005)]
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/17/10.1063/1.2802071
10.1063/1.2802071
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