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Epitaxial growth of -type Ba-hexaferrite films on MgO (0001) with low ferromagnetic resonance linewidths
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View: Figures


Image of FIG. 1.
FIG. 1.

(Color online) Hysteresis loop obtained by vibrating sample magnetometry with a maximum applied field of aligned parallel (dashed) and perpendicular (solid) to the film plane. The sample has been optimally annealed (see text). The perpendicular of compares well to the bulk BaM value of .

Image of FIG. 2.
FIG. 2.

X-ray diffraction pattern for Ba-hexaferrite (-type) film. All significant diffraction features are referenced to indices having a space group of . The single peak appearing near disappeared after a postdeposition annealing procedure (see inset). ( denotes SiC substrate peaks.)

Image of FIG. 3.
FIG. 3.

(Color online) Pole figure obtained for a fixed value of . The single dominant peak corresponding to corresponds to the ⟨006⟩ reflection indicating low -axis dispersion. The weaker peaks exhibiting sixfold symmetry correspond to the closely spaced ⟨104⟩-type reflections illustrating the epitaxial relationship between the BaM and the MgO buffer layer.

Image of FIG. 4.
FIG. 4.

(Color online) Power derivative as a function of applied magnetic field in the region near the ferromagnetic resonance at . The linewidth measured as the peak-to-peak power derivative is for the postannealed BaM film deposited on MgO (0001).


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Epitaxial growth of M-type Ba-hexaferrite films on MgO (111)‖SiC (0001) with low ferromagnetic resonance linewidths