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EL spectra of and Gd coimplanted by F and a sketch of the involved electronic transitions of ions. The inset shows the defect related luminescence from the virgin layer and that containing F or Gd coimplanted by F atoms.
EL quenching of the UV light (left axis) and the change of electric field (right axis) as a function of the injected charge. The experiments were performed at constant current injection of . The concentrations of Gd and F were 2% and 3%, respectively.
Maximum UVEL intensity vs F concentration from the samples flash lamp annealed for at different temperatures and furnace annealed at for at a constant current injection of .
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