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Fourfold increase of the ultraviolet electroluminescence from layers by fluorine coimplantation and flash lamp annealing
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10.1063/1.2803855
/content/aip/journal/apl/91/18/10.1063/1.2803855
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/18/10.1063/1.2803855
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

EL spectra of and Gd coimplanted by F and a sketch of the involved electronic transitions of ions. The inset shows the defect related luminescence from the virgin layer and that containing F or Gd coimplanted by F atoms.

Image of FIG. 2.
FIG. 2.

EL quenching of the UV light (left axis) and the change of electric field (right axis) as a function of the injected charge. The experiments were performed at constant current injection of . The concentrations of Gd and F were 2% and 3%, respectively.

Image of FIG. 3.
FIG. 3.

Maximum UVEL intensity vs F concentration from the samples flash lamp annealed for at different temperatures and furnace annealed at for at a constant current injection of .

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/content/aip/journal/apl/91/18/10.1063/1.2803855
2007-10-30
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Fourfold increase of the ultraviolet (314nm) electroluminescence from SiO2:Gd layers by fluorine coimplantation and flash lamp annealing
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/18/10.1063/1.2803855
10.1063/1.2803855
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