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Photoluminescence spectroscopy of nearly defect-free InN microcrystals exhibiting nondegenerate semiconductor behaviors
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10.1063/1.2804568
/content/aip/journal/apl/91/18/10.1063/1.2804568
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/18/10.1063/1.2804568
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) Top-view FESEM image of InN microcrystals. (b) TEM image taken at the interface between Si substrate and an InN microcrystal, and (c) corresponding SAED pattern. (d) high-resolution TEM image taken at the edge of an InN microcrystal.

Image of FIG. 2.
FIG. 2.

(Color online) (a) Temperature-dependent PL spectra measured from InN microcrystals. With decreasing temperatures, the emission emerged at the low-energy side of near-band-edge transition. (b) The PL peak energy vs temperature shows a well Varshni’s fitting for the experimental data points. (c) Arrhenius plots of the integrated PL intensities for the InN microcrystals.

Image of FIG. 3.
FIG. 3.

(Color online) variable excitation power densities PL spectra measured from InN microcrystals. The PL intensities were normalized to show a blueshift of peak energy with increasing excitation power density. The inset shows the plot of integrated PL intensity vs excitation power density at temperatures of 15 and .

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/content/aip/journal/apl/91/18/10.1063/1.2804568
2007-11-01
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Photoluminescence spectroscopy of nearly defect-free InN microcrystals exhibiting nondegenerate semiconductor behaviors
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/18/10.1063/1.2804568
10.1063/1.2804568
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