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(a) A FESEM image of as-synthesized GaN NWs. The inset is a magnified image which shows that the diameters of the NWs are about . (b) A HRTEM image of an as-synthesized GaN NW. The inset shows the corresponding SAED pattern recorded along the  zone axis and the EDX spectrum of the nanowire.
(a) characteristics of GaN SNW-FET measured at under gate bias ranging from with a step of . The inset is a FESEM image of the SNW-FET. (b) curves of the SNW-FET at .
The curves of a GaN SNW-FET measured at temperature from . The inset is the calculated vs at the low temperature region , where the experimental data are fitted by a solid curve using the formula of vs .
EDX data obtained from the heavily Si-doped GaN NW.
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