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A method to identify shallow dopants in semiconductor nanowires
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10.1063/1.2805019
/content/aip/journal/apl/91/18/10.1063/1.2805019
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/18/10.1063/1.2805019
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Figures

Image of FIG. 1.
FIG. 1.

(a) A FESEM image of as-synthesized GaN NWs. The inset is a magnified image which shows that the diameters of the NWs are about . (b) A HRTEM image of an as-synthesized GaN NW. The inset shows the corresponding SAED pattern recorded along the [0001] zone axis and the EDX spectrum of the nanowire.

Image of FIG. 2.
FIG. 2.

(a) characteristics of GaN SNW-FET measured at under gate bias ranging from with a step of . The inset is a FESEM image of the SNW-FET. (b) curves of the SNW-FET at .

Image of FIG. 3.
FIG. 3.

The curves of a GaN SNW-FET measured at temperature from . The inset is the calculated vs at the low temperature region , where the experimental data are fitted by a solid curve using the formula of vs .

Image of FIG. 4.
FIG. 4.

EDX data obtained from the heavily Si-doped GaN NW.

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/content/aip/journal/apl/91/18/10.1063/1.2805019
2007-11-01
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: A method to identify shallow dopants in semiconductor nanowires
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/18/10.1063/1.2805019
10.1063/1.2805019
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