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Metal-high--high--oxide-semiconductor capacitors and field effect transistors using structure for nonvolatile memory applications
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10.1063/1.2800821
/content/aip/journal/apl/91/19/10.1063/1.2800821
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/19/10.1063/1.2800821
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The energy band diagrams of the transistor under (a) positive and (b) negative gate biases.

Image of FIG. 2.
FIG. 2.

memory window. (b) memory window.

Image of FIG. 3.
FIG. 3.

(a) The programing characteristics of the transistors. (b) The erase characteristics of the transistors.

Image of FIG. 4.
FIG. 4.

The retention properties of the transistors.

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/content/aip/journal/apl/91/19/10.1063/1.2800821
2007-11-06
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Metal-high-k-high-k-oxide-semiconductor capacitors and field effect transistors using Al∕La2O3∕Ta2O5∕SiO2∕Si structure for nonvolatile memory applications
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/19/10.1063/1.2800821
10.1063/1.2800821
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