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Terahertz radiation from ultrahigh-speed field-effect transistors induced by ultrafast optical gate switching
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10.1063/1.2801363
/content/aip/journal/apl/91/19/10.1063/1.2801363
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/19/10.1063/1.2801363

Figures

Image of FIG. 1.
FIG. 1.

Model for explaining the terahertz radiation mechanism for the case of depletion-type FETs. (a) The sample geometry and (b) the circuit diagram of the optical excitation used in this experiment. Expected time evolution of (c) gate electric field, (d) drain-source current , and (e) .

Image of FIG. 2.
FIG. 2.

Schematic configuration of the terahertz setup used in this work.

Image of FIG. 3.
FIG. 3.

Typical terahertz waveforms radiated from the HEMT samples: (a) sample A and (b) sample B when and . was modulated from at .

Image of FIG. 4.
FIG. 4.

Measured terahertz waveforms from sample B under various bias conditions; both and were biased (solid line), and (dashed line), and and (dotted line). Curves were shifted for clarity.

Tables

Generic image for table
Table I.

The designed gate length and the cutoff frequency estimated by a network analyzer of the HEMT samples. The transit time and the cutoff frequency determined by the present terahertz technique are also tabulated.

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/content/aip/journal/apl/91/19/10.1063/1.2801363
2007-11-08
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Terahertz radiation from ultrahigh-speed field-effect transistors induced by ultrafast optical gate switching
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/19/10.1063/1.2801363
10.1063/1.2801363
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