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Growth front nucleation of rubrene thin films for high mobility organic transistors
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View: Figures


Image of FIG. 1.
FIG. 1.

(Color online) Rubrene polycrystalline thin films grown on an OTS treated substrate by ramping substrate temperature from and deposition rate of at different growth stages. (a) AFM image of isolated amorphous islands (deposition time of ). (b) AFM image of polycrystalline structure (deposition time of ). (c) Optical micrograph of polycrystalline structure. (d) Optical micrograph of dense polycrystalline thin films (deposition time ). (e) Optical micrograph of dense polycrystalline thin films . (f) Gray scale map of (e); contrast bar indicates facet angle orientation where 0° refers to axis, while refers to axis.

Image of FIG. 2.
FIG. 2.

(Color online) (a) AFM image (error signal) of rubrene thin films grown on OTS treated using conditions described in Fig 2. (b) Zoom (topograph) of area in (a), with the cross sectional profile demonstrating step and terrace structures of the film. (c) XRD data for rubrene single crystal and thin film.

Image of FIG. 3.
FIG. 3.

(Color online) (a) characteristics of a rubrene thin film field effect transistor (FET). Source-drain current vs source-drain voltage measured at different values of gate voltage ; inset: dependence of drain current on gate voltage for a fixed source-drain voltage of . (b) Optical micrograph of rubrene polycrystalline FET with gold source and drain contacts on the top. The inset illustrates the schematic of the device. Channel length and width are 10 and , respectively.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Growth front nucleation of rubrene thin films for high mobility organic transistors