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Numerical modeling study of the unipolar accumulation transistor
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10.1063/1.2805630
/content/aip/journal/apl/91/19/10.1063/1.2805630
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/19/10.1063/1.2805630
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Numerically generated AMOSFET transfer characteristics at for (a) and (b) acceptor doping densities. (c) and (d) are the corresponding output characteristics at . The semiconductor layer thicknesses used in these simulations are listed on the plots. A hole mobility of is used for all curves. The inset in (d) shows the AMOSFET structure (not to scale) as well as the coordinate system ( measured down) used.

Image of FIG. 2.
FIG. 2.

Hole density as a function of position between the source and drain for various planes below the gate for an acceptor doping density of . The linear current region plots (a) have and and the saturation current region plots (b) have and .

Image of FIG. 3.
FIG. 3.

Hole density as a function of position between the source and drain for various planes below the gate for an acceptor doping density of . The linear current region plots (a) have and and the saturation current region plots (b) have and .

Image of FIG. 4.
FIG. 4.

Variation of the linear region current as a function of semiconductor layer doping density (semiconductor , gate , and ) and gate-oxide thickness (semiconductor , , and ). Here, and .

Image of FIG. 5.
FIG. 5.

Variation of the off-state drain current as a function of semiconductor layer doping concentration (semiconductor , gate , and ) and gate-oxide thickness (active , , and ). The electron and hole lifetimes are taken to be . Here, and .

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/content/aip/journal/apl/91/19/10.1063/1.2805630
2007-11-08
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Numerical modeling study of the unipolar accumulation transistor
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/19/10.1063/1.2805630
10.1063/1.2805630
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