1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Detection of low energy single ion impacts in micron scale transistors at room temperature
Rent:
Rent this article for
USD
10.1063/1.2805634
/content/aip/journal/apl/91/19/10.1063/1.2805634
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/19/10.1063/1.2805634
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

In situ scanning force microscope image of an with etched hole. The inset shows a schematic device cross section taken through the region where the hole was opened in the gate by the FIB process.

Image of FIG. 2.
FIG. 2.

Source-drain currents as a function of pulsed exposure time. The ion beam is on during pulses indicated by the vertical lines. (a) ions and (b) ions . After , the beam current was reduced to /pulse of . The lower curve shows the channel current noise when the beam was blocked. (c) , with the ion beam current reduced to . Single ion hits are indicated by arrows.

Image of FIG. 3.
FIG. 3.

curves of an for a pristine device, after FIB processing and forming gas anneal, and after exposure to noble gas and Sb ions followed by RTA and another forming gas anneal. The source-drain bias was .

Loading

Article metrics loading...

/content/aip/journal/apl/91/19/10.1063/1.2805634
2007-11-05
2014-04-24
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Detection of low energy single ion impacts in micron scale transistors at room temperature
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/19/10.1063/1.2805634
10.1063/1.2805634
SEARCH_EXPAND_ITEM