1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Annealing of dilute-nitride strained multiple quantum wells
Rent:
Rent this article for
USD
10.1063/1.2805637
/content/aip/journal/apl/91/19/10.1063/1.2805637
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/19/10.1063/1.2805637
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Bright field cross section TEM image of a five period MQWs sample and (b) high resolution TEM images of one quantum well layer.

Image of FIG. 2.
FIG. 2.

(Color online) (a) (400) XRD rocking curves of as-grown and postannealed samples, (b) satellite peaks around the GaAsSbN envelope, and (c) satellite peaks around InP envelope. From top to bottom, the curves are from as grown, annealing, annealing, and annealing.

Image of FIG. 3.
FIG. 3.

(Color online) (a) Low-temperature PL as-grown and after three different annealing temperatures (600, 650, and ) and (b) PL intensity and FWHM as a function of annealing temperature.

Loading

Article metrics loading...

/content/aip/journal/apl/91/19/10.1063/1.2805637
2007-11-09
2014-04-19
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Annealing of dilute-nitride GaAsSbN∕InP strained multiple quantum wells
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/19/10.1063/1.2805637
10.1063/1.2805637
SEARCH_EXPAND_ITEM