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Conduction band offset of on GaAs
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10.1063/1.2805811
/content/aip/journal/apl/91/19/10.1063/1.2805811
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/19/10.1063/1.2805811
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Cube root of the IPE yield as a function of the photon energy at different positive applied voltages, from with a step of for the sample. (inset) Schottky plot of the spectral thresholds for IPE from the GaAs valence band into the conduction band. The lines represents the linear fittings.

Image of FIG. 2.
FIG. 2.

(Color online) (a) Shallow core level and valence-band spectra for the clean GaAs surface. (b) Shallow core levels for the -thick film grown on GaAs. (c) Shallow core level and valence-band spectra for the -thick film grown on GaAs.

Image of FIG. 3.
FIG. 3.

Band alignment of the interface between and GaAs. CBO measured with IPE, VBO measured with XPS, and band gap measured with PC. The experimental error is for IPE and for XPS and PC.

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/content/aip/journal/apl/91/19/10.1063/1.2805811
2007-11-05
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Conduction band offset of HfO2 on GaAs
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/19/10.1063/1.2805811
10.1063/1.2805811
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