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GaAs metal-oxide-semiconductor capacitors using atomic layer deposition of gate dielectric: Fabrication and characterization
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View: Figures


Image of FIG. 1.
FIG. 1.

XPS Ga and As spectra of the interface for (a) nontreated and (b) sulfide-treated samples.

Image of FIG. 2.
FIG. 2.

(a) Cross-sectional HRTEM micrograph of the gate stack after PDA at for . (b) HAADF image of the same region, overlaid on the corresponding EELS line scan. (c) A very thin interfacial of was observed at the interface.

Image of FIG. 3.
FIG. 3.

Frequency dispersion behavior of MOS capacitors on the nontreated and sulfur-passivated -type GaAs substrates. The inset also demonstrates the curve for the same sulfide-treated capacitor with thick .

Image of FIG. 4.
FIG. 4.

(a) CET as a function of physical thickness. CET of was obtained for the device with thick . The inset of (a) shows the bidirectional sweep of the sulfide-treated sample with thick . (b) Calculated and measured using the Terman and ac-conductance methods. The inset shows the frequency dispersion behavior of a capacitor on a sulfide-treated -type GaAs substrate.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: GaAs metal-oxide-semiconductor capacitors using atomic layer deposition of HfO2 gate dielectric: Fabrication and characterization