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XPS Ga and As spectra of the interface for (a) nontreated and (b) sulfide-treated samples.
(a) Cross-sectional HRTEM micrograph of the gate stack after PDA at for . (b) HAADF image of the same region, overlaid on the corresponding EELS line scan. (c) A very thin interfacial of was observed at the interface.
Frequency dispersion behavior of MOS capacitors on the nontreated and sulfur-passivated -type GaAs substrates. The inset also demonstrates the curve for the same sulfide-treated capacitor with thick .
(a) CET as a function of physical thickness. CET of was obtained for the device with thick . The inset of (a) shows the bidirectional sweep of the sulfide-treated sample with thick . (b) Calculated and measured using the Terman and ac-conductance methods. The inset shows the frequency dispersion behavior of a capacitor on a sulfide-treated -type GaAs substrate.
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