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Low resistance, nonalloyed Ohmic contacts to InGaAs
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10.1063/1.2806235
/content/aip/journal/apl/91/19/10.1063/1.2806235
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/19/10.1063/1.2806235
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

TLM pattern resistance as a function of contact spacing for the and contacts to . The TLM pattern width was . Also shown are linear regressions to the data. The inset shows resistance vs contact separation for all measured lengths .

Image of FIG. 2.
FIG. 2.

Specific contact resistivity as a function of the concentration of the predeposition soak.

Image of FIG. 3.
FIG. 3.

Specific contact resistivity as a function of anneal temperature for samples prepared with 14.8 normality ammonium hydroxide.

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/content/aip/journal/apl/91/19/10.1063/1.2806235
2007-11-09
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Low resistance, nonalloyed Ohmic contacts to InGaAs
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/19/10.1063/1.2806235
10.1063/1.2806235
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