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Cross-sectional SEM images at each growth step for the fabrication of the free standing GaN. (a) The formation of and GaN dots on nitride sapphire substrate at , (b) LT GaN buffer layer grown on ( dots) through the increasing the substrate temperature from , and (c) voids formed at interfaces after the HT GaN growth.
(Color online) XRD diffraction patterns of ∕sapphire. (a) As grown and (b) after annealing at under ambient.
(Color online) Plan view SEM images of (a) the sapphire surface after wet etching of dots∕sapphire sample showing the remained GaN dots, (b) the sapphire surface after the self-separation of the thick HT GaN showing the remaining GaN particles after the separation, and (c) XRD diffraction patterns of (a) and (b), confirming the existence of the GaN on the surface.
(a) Cross-sectional SEM image of the self-separated FS GaN with about thickness and (b) low temperature PL spectra of the FS GaN showing the dominating of 3.472, DAP of 3.250, and 1LO of . The inset is the PL spectra near the band-gap showing the emission at and the exciton emission at .
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