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Pentacene-based low voltage organic field-effect transistors with anodized gate dielectric
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10.1063/1.2806914
/content/aip/journal/apl/91/19/10.1063/1.2806914
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/19/10.1063/1.2806914

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Output characteristics of (a) untreated and (b) HMDS-treated devices.

Image of FIG. 2.
FIG. 2.

(Color online) Linear and saturation mobilities calculated from transfer characteristics: (a) untreated and (b) HMDS-treated devices, where only the capacitance of the layer is considered.

Image of FIG. 3.
FIG. 3.

(Color online) (a) Gate leakage current vs at and . (b) Pentacene morphology of untreated (left) and HMDS-treated (right) devices.

Tables

Generic image for table
Table I.

Effects of HMDS surface treatment on anodized gate dielectric.

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/content/aip/journal/apl/91/19/10.1063/1.2806914
2007-11-08
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Pentacene-based low voltage organic field-effect transistors with anodized Ta2O5 gate dielectric
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/19/10.1063/1.2806914
10.1063/1.2806914
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