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Nondestructive electrical characterization of integrated interconnect line-to-line spacing for advanced semiconductor chips
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10.1063/1.2806916
/content/aip/journal/apl/91/19/10.1063/1.2806916
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/19/10.1063/1.2806916
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Typical line-to-line leakage current as a function of voltage for different test areas of dielectric film.

Image of FIG. 2.
FIG. 2.

(Color online) vs showing that the slope of the linear region below the leakage plateau is about two times of the slope of the linear region above the leakage plateau .

Image of FIG. 3.
FIG. 3.

Leakage current as a function of voltage for a fixed size structure with two different ramp rates.

Image of FIG. 4.
FIG. 4.

(Color online) Typical line-to-line leakage current as a function of voltage for different line-to-line spacings of dielectric film.

Image of FIG. 5.
FIG. 5.

Comparison between electrically extracted spacing based on ND- method and physically measured spacing by SEM.

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/content/aip/journal/apl/91/19/10.1063/1.2806916
2007-11-08
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Nondestructive electrical characterization of integrated interconnect line-to-line spacing for advanced semiconductor chips
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/19/10.1063/1.2806916
10.1063/1.2806916
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