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The influence of visible light on transparent zinc tin oxide thin film transistors
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10.1063/1.2806934
/content/aip/journal/apl/91/19/10.1063/1.2806934
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/19/10.1063/1.2806934
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Effects of violet irradiation ( and ) on and of ZTO TFTs. Inset: transfer characteristics with and without irradiation.

Image of FIG. 2.
FIG. 2.

(Color online) (a) Influence of the processing temperature and the Zn to Sn composition on the total at light irradiation of an intensity of and a wavelength of 628, 525, and . (b) Total change of threshold voltage for TFTs of different processing temperatures vs light intensity .

Image of FIG. 3.
FIG. 3.

(Color online) Transfer characteristics of TFT with ZTO channel deposited at . (a) For different intensities at . (b) For different wavelengths at .

Image of FIG. 4.
FIG. 4.

(Color online) Normalized exposition of the recovery time of of TFT after illumination ( with at a wavelength of ) in darkness, compared to the decrease of the conductivity of ZTO resistor structure without gate contact and dielectric on glass substrate in the dark after the same illumination.

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/content/aip/journal/apl/91/19/10.1063/1.2806934
2007-11-06
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: The influence of visible light on transparent zinc tin oxide thin film transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/19/10.1063/1.2806934
10.1063/1.2806934
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