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(a) Temperature dependence of magnetization during cooling in a magnetic field of and (b) curve hysteresis measured at for an unpatterned LSMO /LAO /LSCO trilayer film. is normalized by the LSMO and LSCO layer thicknesses. The results for LSMO and LSCO single layer films are also shown by broken lines for comparison.
Magnetic field dependence of measured junction resistance as a function of the temperature in a low-bias measurement for a LSMO/LAO/LSCO junction. The junction resistance is normalized as , where is the maximum value of during the field scan, corresponding to . The traces are shifted vertically for clarity.
(a) Temperature dependences of normalized TMR ratio (averages of typical three junctions) for LSMO/LAO/LSCO junction (●) and LSMO/LAO/LSMO junction (◻). For comparison, normalized curves for LSMO and LSCO single layer films are also shown by broken lines. Here, TMR ratio and are normalized by the values at . (b) Normalized temperature dependence of interface spin polarization deduced from TMR for LSCO (●) and LSMO (□), where is the temperature at which TMR vanishes. is also normalized by the value at . The dependences of normalized for LSMO and LSCO, where for is the Curie temperature defined from curve, are also shown.
Bias voltage dependence of normalized TMR ratio for LSMO/LAO/LSCO junction (solid line) and LSMO/LAO/LSMO junction (broken line). The positive bias is defined as a current flow from LSCO to LSMO electrodes. The TMR ratio is normalized by the value at the low-bias measurement. Inset: schematics for tunneling transport between the DOS in spin-polarized LSMO and LSCO (after Ref. 19) for (left) and (right).
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