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Spin valve effect in self-exchange biased ferromagnetic metal/semiconductor bilayers
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View: Figures


Image of FIG. 1.
FIG. 1.

(Color online) (a) Temperature-dependent magnetization for bilayer samples with three different (Ga,Mn)As thicknesses. Measurements are carried out while warming, after first cooling the samples down to in a field of . The magnetization is shown per unit area. (b) Major magnetization loop at for a bilayer sample with showing two distinct coercive fields for the two FM layers. (c) Minor magnetization loop for the same sample at , measured after saturating the MnAs layer in a field . (d) Dependence of (circles) and (squares) on at .

Image of FIG. 2.
FIG. 2.

(Color online) Normalized CPP magnetoresistance (as a percentage) in a bilayer sample in (a) major and (b) minor hysteresis loops at different temperatures. The data are offset vertically for clarity.

Image of FIG. 3.
FIG. 3.

(Color online) (a) Major and (b) minor hysteresis loops for a trilayer sample at showing that exchange biasing persists even with a spacer layer. Panels (c) and (d) show the CPP magnetoresistance in major and minor loops, respectively, showing the spin valve effect in the trilayer.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Spin valve effect in self-exchange biased ferromagnetic metal/semiconductor bilayers