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Schematic illustrations of the Au/multilayer insulator CIP diode used for transport measurement. The upper figure shows the cross-sectional illustration corresponding to the area enclosed by dashed line in the lower figure. The insulator consisted of a multilayer sputtered on a substrate. The gap size is . The width of opposite side edge of electrode junctions is . The arrows indicate the electron pathways in the multilayered insulator. The inset shows electrical potential profiles on ZnO layers. The solid line and the broken line indicate the potential profiles corresponding with the CL and Ohm’s laws, respectively.
Current-voltage characteristic curve of Au/insulator CIP diode measured at room temperature. The inset shows the bipolar characteristic of the device.
characteristic of the CIP diode measured at room temperature. The solid line and the broken line represent relationships of and , corresponding with SCL currents accompanied by the CL and MG laws, respectively. The turning point of the curve is labeled as .
Current-magnetic field relationships measured under various applied voltages of (a) , (b) , and (c) at room temperature, respectively. The arrows indicate the sequence of the magnetic field applied to the device. The magnetic field is applied parallel to in-plane direction of the multilayer and normal to the current direction corresponding to the direction in Fig. 1.
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