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The improvement of retention time of metal-ferroelectric -insulator -semiconductor transistors and capacitors by leakage current reduction using surface treatment
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10.1063/1.2807842
/content/aip/journal/apl/91/19/10.1063/1.2807842
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/19/10.1063/1.2807842
/content/aip/journal/apl/91/19/10.1063/1.2807842
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/content/aip/journal/apl/91/19/10.1063/1.2807842
2007-11-07
2014-07-26
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: The improvement of retention time of metal-ferroelectric (PbZr0.53Ti0.47O3)-insulator (ZrO2)-semiconductor transistors and capacitors by leakage current reduction using surface treatment
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/19/10.1063/1.2807842
10.1063/1.2807842
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