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The improvement of retention time of metal-ferroelectric -insulator -semiconductor transistors and capacitors by leakage current reduction using surface treatment
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10.1063/1.2807842
/content/aip/journal/apl/91/19/10.1063/1.2807842
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/19/10.1063/1.2807842
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The current density–voltage characteristic of capacitors with various surface treatments.

Image of FIG. 2.
FIG. 2.

(a) The drain current on/off ratio characteristic of Al/PZT MFISFETs with no treatment. (b) The drain current on/off ratio characteristic of Al/PZT MFISFETs with both treatments.

Image of FIG. 3.
FIG. 3.

(a) The are a function of with no treatment MFISFETs. (b) The are a function of with both pre- and post-treatments MFISFETs.

Image of FIG. 4.
FIG. 4.

The retention properties of Al/PZT MFISFETs with both pre- and post-treatments.

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/content/aip/journal/apl/91/19/10.1063/1.2807842
2007-11-07
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: The improvement of retention time of metal-ferroelectric (PbZr0.53Ti0.47O3)-insulator (ZrO2)-semiconductor transistors and capacitors by leakage current reduction using surface treatment
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/19/10.1063/1.2807842
10.1063/1.2807842
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