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Ultralow equivalent oxide thickness obtained for thin amorphous layers grown on Si(001)
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View: Figures


Image of FIG. 1.
FIG. 1.

[(a) and (b)] RHEED patterns along the and azimuths of the reconstructed Si(001) surface before LAO growth, respectively. (c) TEM image of the sample showing that there is no amorphous interfacial layer between the amorphous thick LAO high- oxide and the Si substrate.

Image of FIG. 2.
FIG. 2.

XPS spectra of a thick amorphous LAO layer deposited directly on Si(001) substrate: (a) Si , (b) Al , (c) La , (d) La , and Si core levels. The La and La core level spectra of a crystalline LAO reference are also represented. The interface is free of or silicates.

Image of FIG. 3.
FIG. 3.

(Color online) (a) Typical curves obtained at for a thick LAO/Si MOS sample . A simulation of a thick MOS sample without any charge in the dielectric matches up to the experimental curve. (b) measurement done on this thick amorphous LAO layer and comparison with a simulation (for only) of a thick layer. For the same EOT value, the leakage current of our LAO layer is lower than the one observed with a simulated layer. (c) Best at and measurements found on the amorphous LAO film deposited directly on -type Si(001) substrate at . The simulation fit was realized with a layer with a thickness of and without charge or .


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ultralow equivalent oxide thickness obtained for thin amorphous LaAlO3 layers grown on Si(001)